STP55NF06FP 55A 60V N-Channel Power MOSFET with <0.02Ω RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control
Features
1:Low On-Resistance (Low RDS(on)): Extremely low maximum on-resistance of 0.02Ω (at Vgs=10V), reducing conduction losses, improving efficiency, and minimizing heat generation.
2:High Current Handling: Capable of handling up to 55A continuous drain current, with even higher pulse current capability, making it suitable for high-power applications.
3:Logic-Level Gate Drive: Low threshold voltage (Vgs(th) typically 2V to 4V), allowing it to be directly driven by 5V or 3.3V microcontrollers (e.g., Arduino, STM32) without requiring level-shifting circuits.
4:Fast Switching Speed: Optimized for high-frequency switching applications, such as SMPS and PWM motor control, reducing switching losses.
5:Fully Insulated Package (TO-220FP FullPak): The TO-220FP encapsulation fully encloses the metal heatsink, providing enhanced insulation and safety while simplifying assembly by eliminating the need for additional insulation pads.
6:High Voltage Rating: Drain-source voltage (Vds) rating of 60V, offering sufficient margin for 12V, 24V, and higher voltage systems.
7:Rugged Design: Avalanche rated, ensuring durability under energy surges from inductive load switching (e.g., motors, relays).
8:Low Gate Charge (Qg): Low total gate charge reduces driving requirements and enables efficient high-speed switching.
Applications
■ Switching application
Description
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
INFORMATION
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| Current - Continuous Drain (Id) @ 25°C | | |
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| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
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| Input Capacitance (Ciss) (Max) @ Vds | | |
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| Power Dissipation (Max) | | |
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Drawing
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STP55NF06FP 55A 60V N-Channel Power MOSFET with Images
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